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| NPN Silicon RF Transistor q q BF 599 Common emitter IF/RF amplifier Low feedback capacitance due to shield diffusion Type BF 599 Marking NB Ordering Code (tape and reel) Q62702-F979 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation, TA 25 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Rth JA Symbol VCE0 VCB0 VEB0 IC IB Ptot Tj Tstg Values 25 40 4 25 5 280 150 - 65 ... + 150 Unit V mA mW C 450 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 07.94 BF 599 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector cutoff current VCB = 20 V, IE = 0 DC current gain IC = 7 mA, VCE = 10 V Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA Base-emitter voltage IC = 7 mA, VCE = 10 V AC Characteristics Transition frequency IC = 5 mA, VCE = 10 V, f = 100 MHz Collector-base capacitance VCB = 10 V, VBE = 0 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, VBE = 0 V, f = 1 MHz Optimum power gain IC = 7 mA, VCE = 10 V, f = 35 MHz Forward transfer admittance IC = 7 mA, VCE = 10 V, f = 35 MHz fT Ccb Cce Gpe opt I y21e I - - - - - 550 0.35 0.68 43 175 - - - - - dB mS MHz pF V(BR) CE0 ICB0 hFE VCE sat VBE 25 - 38 - - - - 70 0.15 0.78 - 100 - - - V nA - V Values typ. max. Unit Semiconductor Group 2 BF 599 Total power dissipation Ptot = f (TA) DC current gain hFE = f (IC) VCE = 10 V Collector current IC = f (VBE) VCE = 10 V Collector-emitter saturation voltage IC = f (VCEsat) hFE = 10 Semiconductor Group 3 BF 599 Collector cutoff current ICB0 = f (TA) VCB = 20 V Transition frequency fT = f (IC) f = 100 MHz Collector-base capacitance Ccb = f (VCB) f = 1 MHz Forward transfer admittance Iy21eI = f (IC) Semiconductor Group 4 |
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